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| Final data SN7002N SIPMOS(R) Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Drain pin 3 Gate pin1 Source pin 2 Product Summary VDS RDS(on) ID 60 5 0.2 SOT-23 V A Type SN7002N SN7002N Package SOT-23 SOT-23 Ordering Code Q67042-S4185 Q67042-S4192 Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel Marking sSN sSN Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value 0.2 0.16 Unit A Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 0.8 6 20 Class 1 0.36 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.2A, VDS=48V, di/dt=200A/s, T jmax=150C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-03-26 Final data SN7002N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint RthJA 350 K/W Symbol min. Values typ. max. Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250A Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 60 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, V GS = VDS ID=26A Zero gate voltage drain current VDS=60V, VGS =0, Tj=25C VDS=60V, VGS =0, Tj=150C A 3.9 2.5 0.1 5 10 7.5 5 nA Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.17A Drain-source on-state resistance VGS=10V, ID=0.5A Page 2 2003-03-26 Final data SN7002N Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =48V, ID =0.5A, VGS =0 to 10V VDD =48V, ID =0.5A Symbol Conditions min. Values typ. 0.17 34 7.2 2.8 2.4 3.2 5.3 3.6 max. 45 9.6 4.2 3.6 4.8 8 5.4 Unit g fs C iss C oss C rss td(on) tr td(off) tf VDS2*ID*RDS(on)max, ID=0.16A VGS=0, VDS=25V, f=1MHz 0.09 - S pF VDD=30V, VGS=10V, ID=0.5A, RG=6 ns - 0.14 0.42 1 4.5 0.21 0.63 1.5 - nC V(plateau) VDD =48V, ID = 0.5 A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF = I S VR=30V, IF =lS , diF/dt=100A/s IS TA=25C - 0.83 14.2 5.9 0.2 0.8 1.2 21.3 8.8 A V ns nC Page 3 2003-03-26 Final data SN7002N 1 Power dissipation Ptot = f (TA) 0.38 SN7002N 2 Drain current ID = f (TA) parameter: VGS 10 V 0.22 SN7002N W 0.32 0.28 A 0.18 0.16 Ptot ID 20 40 60 80 100 120 0.24 0.2 0.16 0.14 0.12 0.1 0.08 0.12 0.06 0.08 0.04 0 0 0.04 0.02 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 SN7002N 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 SN7002N K/W A 10 2 10 0 t = 200.0s p / ID DS =V ZthJA ID 1 ms 10 1 10 -1 R DS ) (on 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 0.02 10 -2 DC 10 -2 single pulse 0.01 10 -3 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-03-26 Final data SN7002N 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 1 A 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 7.5 0.75 0.625 10V 7V 6V 5V 4.5V 4.0V 3.7V 3.5V 3.0V 6 5.25 4.5 3.75 3 2.25 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 0.5 0.375 0.25 1.5 0.125 0.75 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V RDS(on) ID 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 1 A 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.4 S 0.8 0.3 0.7 gfs V ID 0.6 0.5 0.4 0.3 0.25 0.2 0.15 0.1 0.2 0.1 0 0 0.05 0.8 1.6 2.4 3.2 4 4.8 6 0 0 0.2 0.4 0.6 0.8 A 1.1 VGS Page 5 ID 2003-03-26 Final data SN7002N 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V SN7002N 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =26A 2.2 V 98% 15 12 1.8 RDS(on) VGS(th) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 C 1.6 typ. 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 180 0 -60 -20 20 2% 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 SN7002N A Ciss pF 10 -1 C 10 1 Coss IF 10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 V 30 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-03-26 Final data SN7002N 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.2 A pulsed, Tj = 25 C 16 V SN7002N SN7002N 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 72 V V(BR)DSS nC 12 68 66 64 62 60 VGS 10 0.2 VDS max 0.5 VDS max 8 0.8 VDS max 6 4 58 56 54 -60 2 0 0 0.4 0.8 1.2 1.6 2 2.8 -20 20 60 100 C 180 QG Tj Page 7 2003-03-26 Final data SN7002N Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-03-26 |
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